Journal
NANO LETTERS
Volume 11, Issue 3, Pages 1106-1110Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl104000b
Keywords
Graphene; bilayer; Bernal stacking; CVD; epitaxy; band gap opening
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Funding
- National Science Foundation of China [20973007, 20973013, 51072004, 50821061, 20833001]
- National Basic Research Program of China [2007CB936203, 2011CB921904]
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We report the epitaxial formation of bilayer Bernal graphene on copper foil via chemical vapor deposition. The self-limit effect of graphene growth on copper is broken through the introduction of a second growth process. The coverage of bilayer regions with Bernal stacking can be as high as 67% before further optimization. Facilitated with the transfer process to silicon/silicon oxide substrates, dual-gated graphene transistors of the as-grown bilayer Bernal graphene were fabricated, showing typical tunable transfer characteristics under varying gate voltages. The high-yield layer-by-layer epitaxy scheme will not only make this material easily accessible but reveal the fundamental mechanism of graphene growth on copper.
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