Journal
NANO LETTERS
Volume 11, Issue 12, Pages 5387-5390Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl2030163
Keywords
Nanopillar; nanowire; photonic crystal laser; low threshold
Categories
Funding
- Air Force Office of Scientific Research [FA9550-08-1-0198, FA9550-09-1-0270]
- National Science Foundation [ECCS-0824273, DMR-1007051]
- United States Department of Defense [NSSEFF N00244-09-1-0091]
- NSF Clean Energy for Green Industry IGERT [DGE-0903720]
- Defense Advanced Research Projects Agency [W911NF-07-1-0277]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1007051] Funding Source: National Science Foundation
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The directed growth of III-V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved via catalyst-free selective-area metal-organic chemical vapor deposition on masked GaAs substrates. The nanopillars implement a GaAs/InGaAs/GaAs axial double heterostructure for accurate, arbitrary placement of gain within the cavity and lateral InGaP shells to reduce surface recombination. The lasers operate single-mode at room temperature with low threshold peak power density of similar to 625 W/cm(2). Cavity resonance and lasing wavelength is lithographically defined by controlling pillar pitch and diameter to vary from 960 to 989 nm. We envision this bottom-up approach to pillar-based devices as a new platform for photonic systems integration.
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