Journal
NANO LETTERS
Volume 11, Issue 4, Pages 1618-1622Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl200002x
Keywords
GaN nanowire; nanomechanics; dislocation; plasticity; fracture; in-situ electron microscopy
Categories
Funding
- DOE BES
- NNSA
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- Chinese Scholarship Council
- NSF through University of Pittsburgh [CMMI 08 010934]
- Sandia National Laboratories
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [0928517] Funding Source: National Science Foundation
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The deformation, fracture mechanisms, and the fracture strength of individual GaN nanowires were measured in real time using a transmission electron microscope scanning probe microscope (TEM-SPM) platform. Surface mediated plasticity, such as dislocation nucleation from a free surface and plastic deformation between the SPM probe (the punch) and the nanowire contact surface were observed in situ. Although local plasticity was observed frequently, global plasticity was not observed, indicating the overall brittle nature of this material. Dislocation nucleation and propagation is a precursor before the fracture event, but the fracture surface shows brittle characteristic. The fracture surface is not straight but kinked at (10-10) or (10-11) planes. Dislocations are generated at a stress near the fracture strength of the nanowire, which ranges from 0.21 to 1.76 GPa. The results assess the mechanical properties of GaN nanowires and may provide important insight into the design of GaN nanowire devices for electronic and optoelectronic applications.
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