Journal
NANO LETTERS
Volume 11, Issue 3, Pages 1300-1305Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl104362e
Keywords
Nanowire transfer; silicon nanowire; crack formation; Ag etching; embedding nanowires
Categories
Funding
- NSF [0826003]
- Link Foundation
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [0826003] Funding Source: National Science Foundation
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Vertical transfer of silicon nanowire (SiNW) arrays with uniform length onto adhesive substrates was realized by the assistance of creating a horizontal crack throughout SiNWs. The crack is formed by adding a water soaking step between consecutive Ag-assisted electroless etching processes of Si. The crack formation is related to the delamination, redistribution, and reattachment of the Ag film during the water soaking and subsequent wet etching steps. Moreover, the crack facilitates embedding SiNWs inside polymers.
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