Journal
NANO LETTERS
Volume 12, Issue 1, Pages 298-302Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl203564s
Keywords
Silicon nanowire; metal-catalyzed electroless etching; photoelectrochemistry; hydrogen evolution reaction; solar water splitting
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Funding
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science, and Technology [2011-0003612]
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Herein we report that silicon nanowires (SiNWs) fabricated via metal-catalyzed electroless etching yielded a photoelectrochemical hydrogen generation performance superior to that of a planar Si, which is attributed to a lower kinetic overpotential due to a higher surface roughness, favorable shift in the flat-band potential, and light-trapping effects of the SiNW surface. The SiNW I photocathode yielded a photovoltage of 0.42 V, one of the highest values ever reported for hydrogen generation on p-type Si/electrolyte interfaces.
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