Journal
NANO LETTERS
Volume 11, Issue 10, Pages 4343-4347Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl202447n
Keywords
Ion beam lithography; electron beam lithography; hydrogen silsesquioxane; helium ion microscope; point spread function; gas field ionization source
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Funding
- NIST Gaithersburg
- Semiconductor Research Corporation
- Center for Excitonics
- Energy Frontier Research Center
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001088]
- DuPont
- Air Force Office of Scientific Research
- National Science Foundation [DMR-08-19762]
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Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm(2), similar to 1000x more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.
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