4.8 Article

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

Journal

NANO LETTERS
Volume 12, Issue 1, Pages 389-395

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl203687n

Keywords

Memristor; resistive memory (RRAM); crossbar; hybrid integration; multilevel; neuromorphic system

Funding

  1. DARPA [HRL0011-09-C-001]
  2. National Science Foundation (NSF) [ECCS-0954621]

Ask authors/readers for more resources

Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available