Journal
NANO LETTERS
Volume 12, Issue 1, Pages 389-395Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl203687n
Keywords
Memristor; resistive memory (RRAM); crossbar; hybrid integration; multilevel; neuromorphic system
Categories
Funding
- DARPA [HRL0011-09-C-001]
- National Science Foundation (NSF) [ECCS-0954621]
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Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme.
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