Journal
NANO LETTERS
Volume 11, Issue 2, Pages 717-722Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl1038456
Keywords
PbS; nanowires; field effect transistors; scanning photocurrent microscopy; minority carrier diffusion length; solar cells
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Funding
- U.C. Davis Startup Fund
- Hellman Fellowship
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- Korea government (MEST) [R01-2008-000-20756-0]
- National Research Foundation of Korea [2008-0061222, R01-2008-000-20756-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We determined the minority carrier diffusion length to be similar to 1 mu m in single PbS nanowire field effect transistors by scanning photocurrent microscopy. PbS nanowires grown by the vapor-liquid-solid method were p-type, with hole mobilities up to 49 cm(2)/(V s). We measured a photoresponse time faster than 14 mu s with near-unity charge separation efficiency at the contacts. For the first time, we also observed a field-dependent photocurrent decay length, indicating a drift dominant carrier transport at high bias.
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