Journal
NANO LETTERS
Volume 11, Issue 11, Pages 4939-4946Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl2028798
Keywords
Interface engineering; organic field-effect transistor; spiropyran; semiconductor/dielectric interface
Categories
Funding
- MOST [2009CB623703, 2012CB921404]
- NSFC [50873004, 50821061, 20952001, 2112016, 20833001]
- FANEDD [2007B21]
Ask authors/readers for more resources
Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading tc a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available