Journal
NANO LETTERS
Volume 11, Issue 12, Pages 5252-5258Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl202674t
Keywords
Silicon nanowires (SiNWs); mesoporous; metal-assisted chemical etching (MACE); photoluminescence (PL)
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Funding
- HKBU [FRG2/10-11/006, Science/03-17-114, SDF/03-17-023, FRG2/09-10/044]
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In general, n-type mesoporous silicon nanowires (mp-SiNWs) are exclusively created by the two-step metal-assisted chemical etching (MACE). This work first reports that one-step MACE (in HF and AgNO3) is also capable of producing the n-type mp-SiNWs, and the developed formula is generally adapted to generate SiNWs by etching n-Si(100) with electrical resistivity over a range of 10(-3)-10(1) Omega.cm. Integrating the contribution of silicon intrinsic properties in the existing MACE mechanism explicitly accounts for the new findings and contradictions with previous studies. The as-generated mesoporous structures emit red light under laser excitation at room temperature. The red-color emission sensitively varies with temperature over a range of 16-300 K, attributed to a temperature-dependent photoluminescent mechanism.
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