4.8 Article

Helical States of Topological Insulator Bi2Se3

Journal

NANO LETTERS
Volume 11, Issue 5, Pages 2088-2091

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl200584f

Keywords

Topological insulator; helical states; SOI; NEGF-DFT

Funding

  1. NSERC of Canada
  2. FQRNT of Quebec
  3. CIFAR
  4. National Natural Science Foundation of China [11047104]

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We report density functional theory analysis of the electronic and quantum transport properties of Bi2Se3 topological insulator, focusing on the helical surface states at the Fermi level E-F. The calculated Dirac point and the tilt angle of the electron spin in the helical states are compared quantitatively with the experimental data. The calculated conductance near E-F shows a V-shaped spectrum, consistent with STM measurements. The spins in the helical states at E-F not only tilts out of the two-dimensional plane, they also oscillate with a 3-fold symmetry going around the two-dimensional Brillouin zone. The helical states penetrate into the material bulk, where the first quintuple layer contributes 70% of the helical wave functions.

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