Journal
NANO LETTERS
Volume 11, Issue 3, Pages 1254-1258Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl1042648
Keywords
Antidot; graphene superlattice; band bending
Categories
Funding
- AFOSR [FA9550-08-1-013]
- Center for Functional Nanomaterials of the Brookhaven National Laboratory [DE-AC02-98CH10886]
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We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically backgated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron hole pairs.
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