Journal
NANO LETTERS
Volume 11, Issue 11, Pages 4730-4735Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl202535d
Keywords
Silicon; nanowire; phosphorus; impurity band conduction; magnetoresistance; exchange interaction
Categories
Funding
- Nano RD [2009-0082724]
- National Research Laboratory [R0A-2007-000-20075-0]
- Korea Science and Engineering Foundation [2009-008-1529]
- Ministry of Education, Science, and Technology
- KIST
- National Research Foundation of Korea [R0A-2007-000-20075-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Heavily phosphorus-doped silicon nanowires (Si NWS) show intriguing transport phenomena at low temperature. As we decrease the temperature, the resistivity of the Si NWs initially decreases, like metals, and starts to increase logarithmically below a resistivity minimum temperature (T,,,), which is accompanied by (i) a zero-bias dip in the differential conductance and (ii) anisotropic negative magnetoresistance (MR), depending on the angle between the applied magnetic field and current flow. These results are associated with the impurity band conduction and electron scattering by the localized spins at phosphorus donor states. The analysis on the MR reveals that the localized spins are coupled antiferromagnetically at low temperature via the exchange interaction.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available