Journal
NANO LETTERS
Volume 11, Issue 11, Pages 4520-4526Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl202434k
Keywords
Double floating-gate single-electron memory; heterostructure; quantum effects; conduction-band offset
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Funding
- NANOSIL European Network of Excellence [216171]
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We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. Tie dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.
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