Journal
NANO LETTERS
Volume 12, Issue 1, Pages 167-171Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl203259f
Keywords
Nanowire; TEM; grain boundary; impurity; tomography; crystal growth
Categories
Funding
- National Science Foundation [DMI-0507053, DMR-1006069]
- NSF-NSEC
- NSF-MRSEC
- Keck Foundation
- State of Illinois
- Northwestern University
- Office of Science, Office of Basic Energy Sciences of the U.S. Department of Energy [DE-AC02-05CH11231]
- Division Of Materials Research [1006069] Funding Source: National Science Foundation
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Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in < 110 > oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in < 112 > oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.
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