Journal
NANO LETTERS
Volume 11, Issue 6, Pages 2242-2246Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl200355d
Keywords
Nanopillar; nanowire; catalyst-free; photonic crystal; selective-area epitaxy
Categories
Funding
- Air Force Office of Scientific Research [FA9550-08-1-0198, FA9550-09-1-0270]
- National Science Foundation [ECCS-0824273, DMR-1007051]
- United States Department of Defense [NSSEFF N00244-09-1-0091]
- NSF Clean Energy for Green Industry IGERT [DGE-0903720]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1007051] Funding Source: National Science Foundation
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We report on the formation and optical properties of bottom-up photonic crystal (PC) cavities formed by III-IV nanopillars (NPs) via catalyst-free selective-area metal-organic chemical vapor deposition on masked GaAs substrates. This method of NP synthesis allows for precise lithographic control of NP position and diameter enabling simultaneous formation of both the photonic band gap (PBG) region and active gain region. The PBG and cavity resonance are determined by independently tuning the NP radius r, pitch a, and height It in the respective masked areas. Near-infrared emission at 970 nm is achieved from axial GaAs/InGaAs heterostructures with in situ passivation by laterally grown InGaP shells. To achieve out-of-plane optical confinement, the PC cavities are embedded in polydimethylsiloxane (PDMS) and removed from the growth substrate. Spatially and spectrally resolved 77 K photoluminescence demonstrates a strong influence of the PBG resonance on device emission. Resonant peaks are observed in the emission spectra of PC cavities embedded in PDMS.
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