Journal
NANO LETTERS
Volume 11, Issue 1, Pages 297-303Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl103962a
Keywords
Graphene; segregation; batch production; wafer-scale; non-noble metal films
Categories
Funding
- Natural Science Foundation of China [51072004, 50821061, 50802003, 20973013, 20833001]
- Ministry of Science and Technology of China [2007CB936203, 2009CB29403]
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Graphene has been attracting wide interests owing to its excellent electronic, thermal, and mechanical performances. Despite the availability of several production techniques, it is still a great challenge to achieve wafer-size graphene with acceptable uniformity and low cost, which would determine the future of graphene electronics. Here we report a universal segregation growth technique for batch production of high-quality wafer-scale graphene from non-noble metal Films. Without any extraneous carbon sources, 4 in. graphene wafers have been obtained From Ni, Co, Cu-Ni alloy, and so forth via thermal annealing with over 82% being 1-3 layers and excellent reproducibility. We demonstrate the First example of monolayer and bilayer graphene wafers using Cu-Ni alloy by combining the distinct segregation behaviors of Cu and Ni. Together with the easy detachment from growth substrates, we believe this facile segregation technique will offer a great driving force For graphene research.
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