Journal
NANO LETTERS
Volume 11, Issue 3, Pages 1190-1194Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl104072y
Keywords
Graphene; nucleation; dislocation; electron channeling contrast imaging
Categories
Funding
- Office of Naval Research at the U.S. Naval Research Laboratory
- American Society for Engineering Education Naval Research Laboratory
Ask authors/readers for more resources
The initial stages of epitaxial graphene growth were studied by characterization of graphene formed in localized areas on C-face 6H-SiC substrates. The graphene areas were determined to lie below the level of the surrounding substrate and showed different morphologies based on size. Employing electron channeling contrast imaging, the presence of threading screw dislocations was indicated near the centers of each of these areas. After the graphene was removed, these dislocations were revealed to lie within the SiC substrate. These observations suggest that screw dislocations act as preferred nucleation sites for graphene growth on C-face SiC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available