Journal
NANO LETTERS
Volume 10, Issue 4, Pages 1271-1275Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl903868w
Keywords
Photoluminescence; two-dimensional materials; metal dichalcogenide
Categories
Funding
- National Science Foundation
- Sloan fellowship
- DOE-BES [DE-FG02-06ER46262]
- Miller fellowship
- Scuola Galileiana di Studi Superiori di Padova
- EAR
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Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS2, a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS2 crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS2 provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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