Journal
NANO LETTERS
Volume 10, Issue 2, Pages 490-493Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl903272n
Keywords
Graphene; transfer; field effect transistor; strain gauge; stretchable electronics
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Funding
- Ministry of Education, Science and Technology [2009-0081966, 20090082608, 2009-0083540]
- Ministry of Knowledge Economy [2009-302101003011-1]
- National Research Foundation of Korea [2010-50171, 2009-0082608, 2009-0093248] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on NI and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. we also demonstrated the applications of the large-area graphene films for the batch fabrication of held-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was similar to 6.1. These methods represent a significant. step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.
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