Journal
NANO LETTERS
Volume 10, Issue 11, Pages 4443-4449Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl1022699
Keywords
Nanowire; nanowire nucleation mechanism; nanowire growth mechanism; surface imaging and spectroscopy
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Funding
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF)
- Knut and Alice Wallenberg Foundation
- EU [015783, NMP4-CT-2004-500101, 214814]
- FWF Vienna
- SFB [F2507-N08]
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Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.
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