Journal
NANO LETTERS
Volume 10, Issue 6, Pages 2268-2274Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl100892y
Keywords
Nanowire; nanowire sensor; field-effect transistor; ion-sensitive field effect; pH-sensing; electric conductance
Categories
Funding
- Sensirion AG
- Swiss Nanoscience Institute (SNI)
- Swiss NanoTera program
Ask authors/readers for more resources
Field effect transistors (FETs) are widely used for the label-free detection of analytes in chemical and biological experiments. Here we demonstrate that the apparent sensitivity of a dual-gated silicon nanowire FET to pH can go beyond the Nernst limit of 60 mV/pH at room temperature. This result can be explained by a simple capacitance model including all gates. The consistent and reproducible results build to a great extent on the hysteresis- and leakage-free operation. The dual-gate approach can be used to enhance small signals that are typical for bio- and chemical sensing at the nanoscale.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available