Journal
NANO LETTERS
Volume 10, Issue 12, Pages 5001-5005Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl103128a
Keywords
Schottky junction; solar cell; electronic gating; carbon nanotubes; crystalline silicon
Categories
Funding
- National Science Foundation [ECCS 0824157]
- Nanoholdings LLC
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0824157] Funding Source: National Science Foundation
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We exploit the low density of electronic states in single wall carbon nanotubes to demonstrate active, electronic modulation of their Fermi level offset relative to n-type silicon in a nanotube-Si (metal-semiconductor) Schottky junction solar cell. Electronic modulation of the Fermi level offset, the junction interface dipole and a field developed across the depletion layer modifies the built-in potential in the device and its power generation characteristics. As produced (before modulation). devices exhibit similar to 8.5% power conversion efficiency (PCE). With active modulation the PCE is continuously and reversibly changed from 4 to 11 %.
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