Journal
NANO LETTERS
Volume 10, Issue 10, Pages 3888-3892Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl1015365
Keywords
Mayer grapheme; field-effect transistor; band gap; mobility gap; localized states; disorder
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Funding
- Ministry of Education, Culture, Sports, Science, and Technology of Japan [16GS502I9, 17069004, 18201028]
- Grants-in-Aid for Scientific Research [18201028] Funding Source: KAKEN
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Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally Steep increase of the resistance is observed under high electric field, however, the resistance does not diverge even at low temperatures The observed temperature dependence of the conductance consists of two contributions the thermally activated (TA) conduction and the variable range hopping (VRH) conduction We find that for the measured electric field range (0 I 3 V/nm) the mobility gap extracted from the TA behavior agrees well with the theoretical prediction for the band gap opening in bilayer graphene, although the VRH conduction deteriorates the insulating state more seriously in bilayer graphene with smaller mobility These results show that the improvement of the mobility is crucial for the successful operation of the bilayer graphene held effect transistor
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