Journal
NANO LETTERS
Volume 10, Issue 9, Pages 3467-3472Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl101589x
Keywords
Vertical field effect transistor; carbon nanotube; low voltage; organic transistor
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Funding
- National Science Foundation [ECCS-0824157]
- Nanoholdings, LLC
- UF Nanoscale Research Facility (NRF)
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0824157] Funding Source: National Science Foundation
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State-of-the-art performance is demonstrated from a carbon nanotube enabled vertical field effect transistor using an organic channel material. The device exhibits an on/off current ratio > 10(5) for a gate voltage range of 4 V with a current density output exceeding 50 mA/cm(2). The architecture enables submicrometer channel lengths while avoiding high-resolution patterning. The ability to drive high currents and inexpensive fabrication may provide the solution for the so-called OLED backplane problem.
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