Journal
NANO LETTERS
Volume 10, Issue 7, Pages 2454-2460Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl100750v
Keywords
Graphene; nanoimprint; nanoelectronics; nanofabrication; nanolithography; nanomaterial
Categories
Funding
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U S Department of Energy [DE-AC02-05CH11231]
Ask authors/readers for more resources
We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width The fabrication combines nanoimprint lithography, block-copolymer self-assembly for high-resolution nanoimprint template patterning, and electrostatic printing of graphene Graphene field-effect transistors (GFETs) made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature We observed multiplateaus in the drain current gate voltage dependence as well as an enhancement of ON/OFF current ratio with reduction of the average ribbon width of GNMs These effects are attributed to the formation of electronic subbands and a bandgap in GNMs Such mesoscopic graphene structures and the nanofabrication methods could be employed to construct future electronic devices based on graphene superlattices
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available