Journal
NANO LETTERS
Volume 10, Issue 3, Pages 880-886Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl903547r
Keywords
Strained nanowires; core-shell nanowires; photoluminescence; Raman
Categories
Funding
- National Science Foundation [DMR-0806700, 0806572, ECCS-0701703]
- Australian Research Council
- Australian National Fabrication Facility
- Nanometer Structure Consortium in Lund
- Swedish Foundation for Strategic Research (SSF)
- Swedish Research Council
- NSF NIRT
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0806572] Funding Source: National Science Foundation
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Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations, This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.
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