Journal
NANO LETTERS
Volume 10, Issue 11, Pages 4483-4487Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl102316b
Keywords
Nanowire; heterostructure; Raman scattering; Fano resonance
Categories
Funding
- ONR [N00014-09-0182]
- DOE-BES [DE-FG02-07ER46401]
- U.S. Department of Energy (DOE) [DE-FG02-07ER46401] Funding Source: U.S. Department of Energy (DOE)
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We report the direct detection of hole accumulation in the core of Ge-Si core-shell nanowire heterostructures by a Fano resonance between free holes and the F-2g mode in Raman spectra. Raman enhancements of 10- 10 000 with respect to bulk were observed and explained using finite difference time domain simulations of the electric fields concentrated in the nanowire. Numerical modeling of the radial carrier concentration revealed that the asymmetric line-shape is strongly influenced by inhomogeneous broadening.
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