Journal
NANO LETTERS
Volume 10, Issue 8, Pages 3084-3089Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl1017145
Keywords
Piezotronic effect; piezopotential; field-effect transistor; carbon nanotube; ZnO nanowire
Categories
Funding
- U.S. Department of Energy (Basic Energy Sciences)
- National Science Foundation
- NIMS, Japan
- NEL [N00173-04-1G-902]
- U.S. Air Force
- ONE [N00014-09-1-0163]
Ask authors/readers for more resources
We report the First piezoelectric potential gated hybrid held-effect transistors based on nanotubes and nanowires. The device consists of single-walled carbon nanotubes (SWNTs) on the bottom and crossed ZnO piezoelectric fine wire (PEW) on the top with an insulating layer between. Here, SWNTs serve as a carrier transport channel, and a single-crystal ZnO PFW acts as the power-free, contact-free gate or even an energy-harvesting component later on. The piezopotential created by an external force in the ZnO PFW is demonstrated to control the charge transport in the SWNT channel located underneath. The magnitude of the piezopotential in the PFW at a tensile strain of 0.05% is measured to be 0.4-0.6 V. The device is a unique coupling between the piezoelectric property of the ZnO PFW and the semiconductor performance of the SWNT with a full utilization of its mobility. The newly demonstrated device has potential applications as a strain sensor, force/pressure monitor, security trigger, and analog-signal touch screen,
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available