Journal
NANO LETTERS
Volume 10, Issue 7, Pages 2588-2591Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl1012695
Keywords
Heterointerfaces; complex oxides; charge writing; atomic force microscopy
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Funding
- Japan Society for the Promotion of Science (JSPS)
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Biased conducting-up atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential
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