Journal
NANO LETTERS
Volume 10, Issue 9, Pages 3517-3523Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl101684c
Keywords
Direct printing; ZnO nanowire; Schottky diode; premetallization
Categories
Funding
- Ministry of Education, Science, and Technology [R32-20031]
- Ministry of Knowledge Economy of Korea [2008-8-1511]
- Korea government (MEST) [2010-0000378]
- Seoul city [ST090835]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030559] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [R32-2008-000-20031-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Although writing was the first human process for communication, it may now become the main process in the electronics industry, because in the industry the programmability as an inherent property is a-necessary requirement for next-generation electronics. As an effort to open the era of writing electronics, here we show the feasibility of the direct printing of a high-performance inorganic single crystalline semiconductor nanowire (NW) Schottky diode (SD), including Schottky and Ohmic contacts in series, using premetallization and wrapping with metallic nanofoil. To verify the feasibility of our process, SDs made of Al-premetalized ZnO NWs and plain ZnO NWs were compared with each other. Even with cold direct printing, the Al-premetalized ZnO NW SD showed higher performance, specifically 1.52 in the ideality factor and 1.58 x 10(5) in its rectification ratio.
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