Journal
NANO LETTERS
Volume 9, Issue 1, Pages 148-154Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl802700u
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- Ontario Centres of Excellence, Cleanfield Energy
- Natural Science and Engineering Research Council of Canada
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We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.
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