Journal
NANO LETTERS
Volume 9, Issue 5, Pages 1866-1871Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl803849e
Keywords
-
Categories
Funding
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- Center for Probing the Nanoscale
- NSF NSEC [PHY-0425897]
- Division Of Physics
- Direct For Mathematical & Physical Scien [GRANTS:13675314] Funding Source: National Science Foundation
- Division Of Physics
- Direct For Mathematical & Physical Scien [0830228] Funding Source: National Science Foundation
Ask authors/readers for more resources
Carbon nanotube network field effect transistors (CNTN-FETs) are promising candidates for low cost macroelectronics. We investigate the microscopic transport in these devices using electric force microscopy and simulations. We find that in many CNTN-FETs the voltage drops abruptly at a point in the channel where the current is constricted to just one tube. We also model the effect of varying the semiconducting/metallic tube ratio. The effect of Schottky barriers on both conductance within semiconducting tubes and conductance between semiconducting and metallic tubes results in three possible types of CNTN+ETs with fundamentally different gating mechanisms. We describe this with an electronic phase diagram.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available