Journal
NANO LETTERS
Volume 9, Issue 1, Pages 112-116Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl802636b
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Funding
- Global Center of Excellence (GCOE) Program [COI]
- Ministry of Education, Culture, Sports, Science and Technology, Japan
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Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a single nanowire form a natural mirror surface to create an axial cavity, which realizes resonance and give stimulated emission. This study is a considerable advance toward the realization of nanowire-based NIR light sources.
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