Journal
NANO LETTERS
Volume 9, Issue 1, Pages 173-177Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl802739v
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- ETH Zurich
- EU program NODE [015783]
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Structural characterization and electrical measurements of silicon nanowires (SiNWs) synthesized by Au catalyzed vapor-liquid-solid growth using silane and axially doped in situ with phosphine are reported. We demonstrate that highly n-doped SiNWs can be grown without structural defects and high selectivity and find that addition of the dopant reduces the growth rate by less than 8% irrespective of the radius. This indicates that also the dopant incorporation is radius-independent. On the basis of electrical measurements on individual wires, contact resistivities as low as 1.2 x 10(-7) Omega cm(-2) were extracted. Resistivity measurements reveal a reproducible donor incorporation of up to 1.5 x 10(20) cm(-3) using a gas phase ratios of Si/P = 1.5 x 10(-2). Higher dopant gas concentrations did not lead to an increase of the doping concentration beyond 1.5 x 10(20) cm(-3).
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