Journal
NANO LETTERS
Volume 9, Issue 11, Pages 3877-3882Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl902067a
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Funding
- DARPA [W31P4Q-08-1-0009, AROW911NF-08-1-0249]
- BESDOE [DE-FG-02-07ER46394]
- Air Force Office [FA9550-08-1-0046]
- China Scholarship Council (CSC) [20083019]
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We demonstrate the growth of phosphorus doped Zn1-xMgxO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn0.92Mg0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of similar to 140 meV is identified by temperature-dependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application in high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.
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