Journal
NANO LETTERS
Volume 9, Issue 4, Pages 1341-1344Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl802977m
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Funding
- DFG [Ro1 1198/72,3, CH159/61]
- European Commission [034274]
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The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current-voltage measurements. By varying the implantation parameters in several process steps, uniform p- and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective doping is demonstrated by electron beam-induced current imaging on single nanowires, and current-voltage measurements show their well-defined rectifying behavior.
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