Free-Standing Epitaxial Graphene

We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to mu 0 pm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that the resonators are much stiffer than expected for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during the release of the devices, demonstrating that the technique is a robust means of fabricating large-area suspended graphene structures.