4.8 Article

Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers

Journal

NANO LETTERS
Volume 9, Issue 1, Pages 346-352

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl8031444

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Funding

  1. Nanoscale Science and Engineering Initiative of the NSF [CHE-0117752]
  2. New York State Office of Science, Technology, and Academic Research (NYSTAR)
  3. Nanoelectronics Research Initiative
  4. Office of Basic Energy Sciences, U.S. DOE [DE-FG02-98ER-14861, DE-FG02-03ER15463]

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The properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman spectroscopy of the G-, D-, and 2D-phonon modes. The G-mode phonons exhibit reduced energies (1580 cm(-1)) and increased widths (14 cm(-1)) compared to the response of graphene monolayers supported on the SiO2-covered substrate. From analysis of the G-mode Raman spectra, we deduce that the free-standing graphene monolayers are essentially undoped, with an upper bound of 2 x 10(11) cm(-2) for the residual carrier concentration. On the supported regions, significantly higher and spatially inhomogeneous doping is observed. The free-standing graphene monolayers show little local disorder, based on the very weak Raman D-mode response. The two-phonon 2D mode of the free-standing graphene monolayers is downshifted in frequency compared to that of the supported region of the samples and exhibits a narrowed, positively skewed line shape.

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