4.8 Article

Signal Amplification by 1/f Noise in Silicon-Based Nanomechanical Resonators

Journal

NANO LETTERS
Volume 9, Issue 9, Pages 3096-3099

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl9004546

Keywords

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Funding

  1. NSF [EMT/NANO-0829885]
  2. Direct For Computer & Info Scie & Enginr
  3. Division of Computing and Communication Foundations [0829885] Funding Source: National Science Foundation

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We report signal amplification by 1/f(alpha) noise with stochastic resonance In a nonlinear nanomechanical resonator. The addition of 1/f(alpha) noise to a subthreshold modulation signal enhances the probability of an electrostatically driven resonator switching between its two vibrational states in the hysteretic region. Considering the prevalence of 1/f noise in the materials In integrated circuits, signal enhancement demonstrated here, using a fully on-chip electronic actuation/detection scheme, suggests beneficial use of the otherwise detrimental noise.

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