Journal
NANO LETTERS
Volume 9, Issue 7, Pages 2542-2546Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl9005657
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Funding
- NSF
- NRI
- NSF CAREER [DMR/0748910]
- UC Lab Fees [09-LR-06-117702-BASD]
- ONR [N00014-09-1-0724]
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Graphene has emerged as an electronic material that Is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like spectroscopy have been widely reported with varying interpretations. Here we show evidence for strain-induced spatial modulations in the local conductance of single-layer graphene on SiO2 substrates from scanning tunneling microscopic (STM) studies. We find that strained graphene exhibits parabolic, U-shaped conductance vs bias voltage spectra rather than the V-shaped spectra expected for Dirac fermions, whereas V-shaped spectra are recovered in regions of relaxed graphene. Strain maps derived from the STM studies further reveal direct correlation with the local tunneling conductance. These results are attributed to, a strain-induced frequency increase in the out-of-plane phonon mode that mediates the low-energy inelastic charge tunneling into graphene.
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