Journal
NANO LETTERS
Volume 8, Issue 12, Pages 4191-4195Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl801728d
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Funding
- NSFC/RGC Joint Research Scheme [N_CityU 125/05]
- Research Grants Council of Hong Kong SAR, China
- US Army International Technology Center-Pacific
- National 973 projects of the Major State Research Development Program of China [2006CB933000, 2007CB936000]
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Vertically aligned Mg-doped GaN nanorods have been epitaxially grown on n-type Si substrate to form a heterostructure for fabricating p-n heterojunction photovoltaic cells. The p-type GaN nanorod/n-Si heterojunction cell shows a well-defined rectifying behavior with a rectification ratio larger than 10(4) in dark. The cell has a high short-circuit photocurrent density of 7.6 mA/cm(2) and energy conversion efficiency of 2.73% under AM 1.5G illumination at 100 mW/cm(2). Moreover, the nanorod array may be used as an antireflection coating for solar cell applications to effectively reduce light loss due to reflection. This study provides an experimental demonstration for integrating one-dimensional nanostructure arrays with the substrate to directly fabricate heterojunction photovoltaic cells.
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