Journal
NANO LETTERS
Volume 8, Issue 8, Pages 2591-2597Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl073022t
Keywords
-
Categories
Funding
- Research Grants Council of Hong Kong SAR, China [N-CityU125/05]
- City University of Hong Kong [7002121]
- US Army International Technology Center-Pacific
- National Basic Research Program of China (973 Program) [2006CB933000, 2007CB936000]
Ask authors/readers for more resources
Well-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on alpha-sapphire substrates by using N2O as a dopant source via vapor-liquid-solid growth, The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs. Electrical transport measurements reveal that the nondoped ZnO NWs exhibit n-type conductivity, whereas the nitrogen-doped ZnO NWs show compensated highly resistive n-type and finally p-type conductivity upon increasing N2O ratio in the reaction atmosphere. The electrical properties of p-type ZnO NWs are stable and reproducible with a hole concentration of (1-2) x 10(18) cm(-3) and a field-effect mobility of 10-17 cm(2) V-2 S-1. Surface adsorptions have a significant effect on the transport properties of NWs. Temperature-dependent PL spectra of N-doped ZnO NWs show acceptor-bound-exciton emission, which corroborates the p-type conductivity. The realization of p-type ZnO NWs with durable and controlled transport properties is important for fabrication of nanoscale electronic and optoelectronic devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available