Journal
NANO LETTERS
Volume 8, Issue 8, Pages 2188-2193Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl080610d
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Funding
- Pembroke College, EPSRC, Cambridge European Trust
- Ministry of Information and Communication, Republic of Korea [A1100-0602-0101]
- Royal Society
- Leverhulme Trust
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We demonstrate n- and p-type field-effect transistors based on Si nanowires (SiNWs) implanted with P and B at fluences as high as 10(15) cm(-2). Contrary to what would happen in bulk Si for similar fluences, in SiNWs this only induces a limited amount of amorphization and structural disorder, as shown by electrical transport and Raman measurements. We demonstrate that a fully crystalline structure can be recovered by thermal annealing at 800 degrees C. For not-annealed, as-implanted NWs, we correlate the onset of amorphization with an increase of phonon confinement in the NW core. This is ion-dependent and detectable for P-implantation only. Hysteresis is observed following both P and B implantation.
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