Journal
NANO LETTERS
Volume 8, Issue 12, Pages 4146-4150Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl801128f
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Funding
- EU [015783 NODE]
- French National Research Agency
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We report on a theoretical study of surface roughness effects on charge transport in silicon nanowires with three different crystalline orientations, [100], [110] and [111]. Using an atomistic tight-binding model, key transport features such as mean-free paths, charge mobilities, and conductance scaling are investigated with the complementary Kubo-Greenwood and Landauer-Buttiker approaches. The anisotropy of the band structure of bulk silicon results in a strong orientation dependence of the transport properties of the nanowires. The best orientations for electron and hole transport are found to be the [110] and [111] directions, respectively.
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