Journal
NANO LETTERS
Volume 8, Issue 7, Pages 2092-2096Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl0800873
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We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.
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