Journal
NANO LETTERS
Volume 8, Issue 7, Pages 1995-1999Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl801059v
Keywords
-
Categories
Funding
- EPSRC [EP/D030501/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/D030501/1] Funding Source: researchfish
Ask authors/readers for more resources
We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap-a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realize p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available