Journal
NANO LETTERS
Volume 8, Issue 10, Pages 3532-3537Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl801637h
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Funding
- Grant Agency of the Czech Republic [203/07/J067]
- Academy of Sciences of the Czech Republic [IAA 400400804]
- Materials, Structure and Devices (MSD) center
- NSF-CHE [0111370]
- [NSF/DMR-07-04197]
- [NIH-RR02594]
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [0111370] Funding Source: National Science Foundation
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A detailed analysis of the in situ Raman spectroelectrochemical behavior of individual semiconducting single-walled carbon nanotubes (SWCNTs) is presented. Special attention has been paid to the development of the tangential (TG) mode frequency, which shifts when the externally applied potential V-e is shifted away from V-e = 0. The magnitude and direction (upshift or downshift) of the tangential mode band has been found to be dependent on the diameter of the semiconducting tubes. For negative charging, the small-diameter tubes exhibit a downshift while the large-diameter tubes exhibit an upshift. This behavior is explained by a competition between two effects which cause opposite shifts in the TG mode frequency during negative charging: a phonon renormalization effect and a C-C bond weakening during the charging process. Positive charging always causes an upshift of the TG mode frequency. However, the magnitude of the upshift is dependent on the tube diameter.
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