Journal
NANO LETTERS
Volume 8, Issue 7, Pages 2056-2062Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl801482z
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Phase-change memory, which switches reversibly between crystalline and amorphous phases, is promising for next generation data-storage devices. In this work, we present a novel, nonbinary data-storage device using core-shell nanowires to significantly enhance memory capacity by combining two phase-change materials with different electronic and thermal properties to engineer different onsets of amorphous-crystalline transitions. Electric-field induced sequential amorphous-crystalline transition in core-shell nanowires displays three distinct electronic states with high, low, and intermediate resistances, assigned as data 0, 1, and 2.
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