Journal
NANO LETTERS
Volume 8, Issue 11, Pages 3594-3597Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl8014439
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Funding
- APVV [06-628]
- Marie Curie Intra-European Fellowship [MEIF-CT-2005-025934]
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The position and width of the Raman G-line was analyzed for unintentionally doped single-layered graphene samples. Results indicate a significant heating of the monolayer by the laser beam. Moreover, a weak additional component was resolved in the G-band. The position of the line is independent of the level of doping of the sample. We conclude that this new component is due to the phonons coupled to the intraband electronic transitions.
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